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In a bipolar junction transistor the forward-biased emitter injects minority carriers into the base, which are then swept across the reverse-biased base-collector depletion layer. … point-contact transistor might work the same way: the rectifying Schottky barrier might inject minority carriers from the metal emitter into the doped silicon base which would then be swept across the reverse-biased …

The DC source with the higher voltage, A, is connected in reverse bias to the base-collector diode, and the DC source with the lower voltage, B, is connected in forward bias with the emitter-base diode … Upon being connected in reverse-bias, the depletion zone of the base-collector diode widens. …

OK so I understand that an LED is a pn junction where when a forward bias is placed across the junction, the electric field causes the electrons to combine with the holes and release a photon through radiative …

If p-type semiconductor and n-type semiconductor of a diode are equally doped, and if the diode is forward biased, then holes will move toward the n-type semiconductor and electrons will move toward the …

This term is used frequently to describe the mechanism of current flow in a forward biased PN junction. … In effect, what is recombination current through a PN junction? …

Now, during biasing the junction between emitter and base is made forward biased and the junction between collector and base is made reverse biased. … My question is that if one of the junction of a transistor is reverse biased, how does the transistor allow current to flow through it because the reverse biased junction (diode) doesn't allow the current …

So, I understand that for a NPN transistor to work the emitter-base junction needs to be forward biased and the collector-base junction needs to be reverse biased. … reverse biased. …

The problem is: This law is also used in forward bias. The $ V_{built\text{-}in} $ is substituted by the net resultant voltage of the forward bias. … This is wrong, the resultant voltage is NOT countering the diffusion current along the gradient, there is forward current flowing. …

In a BJT (Bipolar Junction Transistor), say NPN in common base configuration, we forward bias the Base-Emitter Junction and reverse bias the Base-Collector Junction when using a constant DC supply. … And this means, the Base-Emitter Junction is now reverse biased and Base-Collector is forward biased. This leads the BJT to be in Reverse-Active Mode. …

If a PN junction diode is connected to a battery, the P part must have a higher potential than the N part(because these points are connected to the battery) and so there should be a potential drop across …

Let us assume a p-n junction diode is in its steady state in unbiased condition that is no charge is flowing through the depletion region. … But when we make it forward biased with a constant DC voltage source then we are able to reduce the potential barrier a bit and the electrons from the n side will again start flowing. …

A device with this property can be fabricated by placing a strong forward bias on a heavily doped p-n junction, as in Fig. 41-16. …

Consider a simple case shown in figure,there in situation 1 potential due to two batteries are added up and in situation two the the second battery is replaced by a diode in forward bias, if I apply Kirchhoff's … As per Wikipedia in forward bias net voltage = 2V-Vs, but if I follow the above approach iam getting 2V+Vs. I think about this a lot but could not get any idea. …

diode is under forward bias? … I know that in forward bias,the applied voltage is opposite to the built in voltage due to accumulation of charges in the depletion layer.also in such case,the diffusion curent increases many times but …

We know when we apply forward bias, then the dominant current flow from P to N direction and the contribution of diffusion current is more than drift current. … During diffusion it is crossing the depletion region, and since diffusion current exist for the entire period of time we are applying forward biasing. …