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Why does the PN Junction never ceases to exist even under strong forward bias? …

Why there is exponential growth in current with respect to voltage in p-n junction diode under forward bias configuration? …

I was reading about diffusion current in pn junction with forward bias. However, I got stuck at understanding how diffusion current increases as bias voltage increases. … I understand how pn junction is created, how energy barrier changes under forward and reverse bias. …

The problem is: This law is also used in forward bias. The $ V_{built\text{-}in} $ is substituted by the net resultant voltage of the forward bias. … This is wrong, the resultant voltage is NOT countering the diffusion current along the gradient, there is forward current flowing. …

When a pn-junction (e.g. an LED) is forward biased the height of the potential barrier is reduced... ...unless you apply a huge potential $V$, in which case the barrier gets inverted and the band edges …

From what I have studied so far, under forward bias the pn junction's depletion layer and barrier potential are reduced. … forward bias the barrier is reduced and electrons and holes can start diffusing again? …

Are LEDs connected in forward bias or reverse bias? … Here's the question: Light Emitting Diode is A) A lightly doped p-n junction diode connected in Reverse Bias. B) A lightly doped p-n junction diode connected in Forward Bias. …

I understand that when a pn-junction is forward biased minority carriers accumulate and form an exponential charge concentration in relationship to the distance from the junction, as the figure below shows … Why the charge density $p_{n0}$ is not higher near the junction? …

with no biased $$ \frac{p_n}{p_p} = e^{-\frac{qV_bi}{kT}} $$ I can say, $p_n<p_p$. … I can understand that $p_n$ with forward biased > $p_n$ without biased, but could it be larger than $N_A$? is it a correct understanding? or I am missing something here? …

When a p-n junction is forward biased then its energy-band diagram looks like this: What would happen if $V_a>V_{bi}$? …

When a forward bias is applied, the amount of holes diffusing increases. That is an extra amount of holes $ P_n . e^{V_d/V_t} $ found on the n side of the junction. … $V_d$ = Forward Bias Voltage $V_t$ = Thermal Voltage …

For a forward biased PN junction, we assume the hole and electron currents are constant inside the depletion region when there is no generation or recombination in the depletion region (shown from the …

The depletion region reduces as the forward bias is increased. Does at any point it reach zero or negligible length? … Knee voltage of a diode is defined as the minimum amount of forward bias required for the diode to show significant conduction. …

When a PN junction is forward biased, majority electons diffuse into p region and majority holes diffuse into n region, if we impose quasi-neutrality, then we have that in the p and n regiosn the change …

Does the electric field strength within the depletion region decrease as a result of a decrease in the depletion width due to forward bias vs no bias condition? … Does this electric field strength whether or not is affected by different bias condition contribute to the change in the barrier potential somehow if all other factor remains the same (i.e.: temperature …