I want to create a set of silicon based materials that have been doped with different materials and/or different amounts of dopants. The purpose of this is to see how the spring constant of silicon changes with the different electrical properties, specifically, with the change in resistivity (because we are all set up to measure resistivity to a highly accurate degree).
Now, I know that the physical deposition of the interstitial dopants will, by themselves, change the spring constant. What I am looking for is effects beyond that, effects that are due to changes in the electron mobility as quantified via resistivity.
As such, the particular material (silicon) and the various dopants are actually irrelevant to this question. They were included for context only. My true question is as follows:
Are there any formulas or concepts that will explain or predict how does the spring constant of a given material change as its resistivity changes?
Any papers cited and/or books (Kittel, Mermin, Dieter, etc) would be appreciated.
If the only way to understand this is through the densities of the dopants vs substrate, or any other of the usual suspects, that's fine. But what I would really like is a more "magical" argument I guess:
I have a material with a certain resistivity. I wave a magic wand and change its resistivity. What is the new spring constant?
Hmm, I hope that's clear. Let me try one more:
I am looking for an Ohm's "law" like equation that relates spring constant to resistivity with a few physical constants thrown into a constant somewhere in the equation. Does such a thing exist?
Okay, well, any help is appreciated!