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I've seen the energy band diagrams of PN diode in forward bias and reverse bias, where an external electric field Eext is responsible for biasing. … The energy band plot shows the slope in the depletion region, that signifies the junction electric field Ej. …

I have a question about the pn-junction under forward bias. I am interested in minority carrier concentration on the depletion zone boundary. … So we can rewrite the pn-junction law as: $n_p p_p=n_i^2 exp(q\frac{V}{kT})$. …

So in an NPN transistor, when the base-emitter is forward biased, and the base-collector is reversed biased, electrons from the emitter get to the base. … That part I understand, electrons are the main carriers, and the junction is forward biased, so they can travel from the emitter to the base. …

For a forward biased PN junction, we assume the hole and electron currents are constant inside the depletion region when there is no generation or recombination in the depletion region (shown from the …

When a PN junction is forward biased, majority electons diffuse into p region and majority holes diffuse into n region, if we impose quasi-neutrality, then we have that in the p and n regiosn the change …

According to my book the built-in potential $V_{bi}$ for a PN junction under thermal equiliubrium is: $$V_{bi}= \frac{KT}{q}In(\frac{n_{no}p_{po}}{{n_{i}}^2})$$ where $n_{no}$ and $p_{po}$ are the majority … My professor claims the following is true in forward bias: $$V_{bi}- V_{F}= \frac{KT}{q}In(\frac{n_{no}p_{po}}{{n_{i}}^2})$$ Where $V_{F}$ is the forward applied bias. …

For the operation of the transistor, the base-emitter junction is forward-biased and the Base collector junction is reversed-biased. … Since the base is lightly doped and thin and due to the reverse biasing of the base-collector junction(electric field exits between the base and collector), the electrons coming from the N side (Emitter …

If, however, you apply positive voltage to the n-type, and negative to the p-type ("reverse-biasing" the diode) you simply reinforce the voltage gradient which was already naturally set up in the PN junction … I cannot understand why when apply positive voltage on the p-type and a negative at the n-type ("forward-biasing" the diode), the positive voltage it forces e- in the n-type so they removing closer to …

I understand that when a pn-junction is forward biased minority carriers accumulate and form an exponential charge concentration in relationship to the distance from the junction, as the figure below shows … Why the charge density $p_{n0}$ is not higher near the junction? …

As an aside, for example when discussing high-level injection, some texts will mention that when one applies a forward bias to a PN junction, actually the majority carrier concentration increases as well … The excess minority carriers are injected there due to the barrier lowering of the forward bias, but what's bringing the majority carriers there? …

When a forward bias is applied, the amount of holes diffusing increases. That is an extra amount of holes $ P_n . e^{V_d/V_t} $ found on the n side of the junction. … $V_d$ = Forward Bias Voltage $V_t$ = Thermal Voltage …

The common phenomenological explanation of the forward active transistor operation is (e.g. in case of a NPN transistor) that when the base-emitter junction is forward biased holes can diffuse from the …

I want to derive an expression of the quasi-Fermi levels as functions of distance in the neutral p and n regions (outside depletion zone) when a forward-bias voltage $V_a$ is applied, as shown in Figure …

Are LEDs connected in forward bias or reverse bias? … Here's the question: Light Emitting Diode is A) A lightly doped p-n junction diode connected in Reverse Bias. B) A lightly doped p-n junction diode connected in Forward Bias. …

these are some graphs for the relation between barrier potential and distance in a pn junction under no biasing reverse biasing forward biasing my problem with these graphs is that they all seem to …