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Semiconductor physics is the branch of solid state physics that focuses on specific properties of semiconductors. It studies dynamics of different perturbations (mainly electrons and holes) in the semiconductor crystal and the ways to harness it in electrical circuits.

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Why and how is hole trapping happens by acceptor impurities only and not by donor impurities...

Why and how is hole trapping happens by acceptor impurities only and not by donor impurities of a semiconductor detector? Am I missing very basic phenomena?
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Why Li is not added as contact by ion implantation method in p type HPGe detector? [duplicate]

n+ contact of p type Ge is ~700µm thick compared to p+ contact of n type Ge only ~0.3µm. The process of adding the contact is different. n+ contact Li is added by diffusion process but p+ contact B is …
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Energy information in gamma spectrometry

In gamma spectrometry, energy is deposited in the crystal and the electron from the valence band gets excited to the conduction band. Both bands have degenerate energy levels. More the energy depositi …
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Gamma spectrometry: effect on one peak when adding another source

Suppose I have a sample containing only 137Cs. Now assume it shows 1000 cps counts for 137Cs, 662keV energy. Now I added 60Co (1173, 1332 keV) source in the same sample. Compton scattering backgro …
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Why n+ contact of p type Ge is 700um thick compared to p+ contact of n type Ge only 0.3um?

Read the references as suggested....but still not got answer Li is added by diffusion process but B is added by implantation. In Ion implantation we can achieve thin contact, but in diffusion we can …
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Why n+ contact of p type Ge is 700um thick compared to p+ contact of n type Ge only 0.3um?

Whether the reason is as follows? Predominantly HPGe is p type. So compensation of large p type impurity requires more n+ contact. (700um) But n type Ge is made by doping of excess addition of n type …
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In HPGe detector how electron-hole pair remembers energy information of incident gamma?

In the HPGe detector, any gamma energy (> e-h pair production E) shall excite the electron of the valence band and send it to the conduction band. Due to reverse bias, the conduction band e shall be c …
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Questions regarding germanium detector

Why n+ contact in n type Ge is not several hundred microns? . Why we require both additional p or n type contact? in p type Ge, why we require additional p type junction also? crystal itself should …
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