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I have a few queries regarding the barrier potential in a p-n junction diode. enter image description here

  1. Is the barrier potential dependent on temperature? Why/why not?

  2. Does the barrier potential depend on doping concentration? Why/Why not?

  3. Why is the barrier potential different for different semiconductors?

Basically, what determines the barrier potential for a p-n junction?

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In a homojunction the barrier potential depends on the difference in Fermi levels been the n and p sides. If different materials are used (heterojunction) then there is an additional potential from intrinsic difference in electron affinity.

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