In a BJT(Bipolar Junction Transistor), say NPN in common base configuration, we forward bias the Base-Emitter Junction and reverse bias the Base-Collector Junction when using a constant DC supply.

Intuitively, when I replace DC with AC, the polarity changes after every half cycle. And this means, the Base-Emitter Junction is now reverse biased and Base-Collector is forward biased. This leads the BJT to be in Reverse-Active Mode.

But, we also know, the manufacturing of transistor is made uniquely, Emitter with medium area and highly doped and Collector being of largest in area and averagely doped. And changing the direction of current should might obstruct its function.

So, is there some transistors that can go in reverse-active mode and some breakdown, or it is a general property? And if later is the answer, how does it work?

In a BJT  (Bipolar Junction Transistor), say NPN in common base configuration, we forward bias the Base-Emitter Junction and reverse bias the Base-Collector Junction when using a constant DC supply.

Intuitively, when I replace DC with AC, the polarity changes after every half cycle. And this means, the Base-Emitter Junction is now reverse biased and Base-Collector is forward biased. This leads the BJT to be in Reverse-Active Mode.

But, we also know, the manufacturing of transistor is made uniquely, Emitter with medium area and highly doped and Collector being of largest in area and averagely doped. And changing the direction of current should might obstruct its function.

So, is there some transistors that can go in reverse-active mode and some breakdown, or it is a general property? And if later is the answer, how does it work?

In a BJT, say NPN in common base configuration, we forward bias the Base-Emitter Junction and reverse bias the Base-Collector Junction when using a constant DC supply.

Intuitively, when I replace DC with AC, the polarity changes after every half cycle. And this means, the Base-Emitter Junction is now reverse biased and Base-Collector is forward biased. This leads the BJT to be in Reverse-Active Mode.

But, we also know, the manufacturing of transistor is made uniquely, Emitter with medium area and highly doped and Collector being of largest in area and averagely doped. And changing the direction of current should might obstruct its function.

So, is there some transistors that can go in reverse-active mode and some breakdown, or it is a general property? And if later is the answer, how does it work?

In a BJT(Bipolar Junction Transistor), say NPN in common base configuration, we forward bias the Base-Emitter Junction and reverse bias the Base-Collector Junction when using a constant DC supply.

Intuitively, when I replace DC with AC, the polarity changes after every half cycle. And this means, the Base-Emitter Junction is now reverse biased and Base-Collector is forward biased. This leads the BJT to be in Reverse-Active Mode.

But, we also know, the manufacturing of transistor is made uniquely, Emitter with medium area and highly doped and Collector being of largest in area and averagely doped. And changing the direction of current should might obstruct its function.

So, is there some transistors that can go in reverse-active mode and some breakdown, or it is a general property? And if later is the answer, how does it work?