What are the requirements for describing charge carriers (e.g. electrons) in a semiconducting material by - Fermi distribution - Boltzmann distribution
When do we apply the one or the other? If the explanation to this question is in Ashcroft/Mermin, reference to the relevant chapter would be appreciated.
I don't agree with both commentators so far.
Edit Consider Eq. 21 in Sze, PHysics of Semiconductor Devices:
$$n = N_C exp\left(-\frac{E_C-E_F}{kT}\right)$$
or Eq. 2.16 in Pierret, Semiconductor device fundamentals.