According to the [Review of Particle Physics][1] (Section 33.7.4 of the 2014 edition) there are two main causes of radiation damage for electronic devices: > 1. Bulk damage due to displacement of atoms from their lattice sites. This leads to increased leakage current, carrier trapping, and > build-up of space charge that changes the required operating voltage. > Displacement damage depends on the non-ionizing energy loss and the > energy imparted to the recoil atoms, which can initiate a chain of > subsequent displacements, i.e., damage clusters. Hence, it is critical > to consider both particle type and energy. > 2. Surface damage due to charge build-up in surface layers, which leads to increased surface leakage currents. In strip detectors the > inter-strip isolation is affected. The effects of charge build-up are > strongly dependent on the device structure and on fabrication details. > Since the damage is proportional to the absorbed energy (when > ionization dominates), the dose can be specified in rad (or Gray) > independent of particle type. The [review][2] is freely accessible and, although brief and technical, you can find more details there. Also, the review suggests to look at the [Handbook of Radiation Effects][3] for a detailed explanation on the matter. From what I can see from the ToC, there is also a chapter named *The interaction of radiation with shielding materials* that might answer your curiosity about mechanical damage. [1]: http://pdg.lbl.gov/ [2]: http://pdg.lbl.gov/ [3]: http://ukcatalogue.oup.com/product/9780198507338.do