My understanding is that the intrinsic carrier concentration of a wide bandgap material tends to be lower than that of a narrow bandgap material.
$$ n_i = \left(N_cN_v\right)^{1/2}e^{\left(\frac{-E_g}{2kT}\right)} $$
and the open circuit voltage of a solar cell is
$$ V_{OC} = \frac{kT}{e}ln\left(\frac{J_{SC}}{J_o}\right) $$
where
$$ J_o = e\left(\frac{D}{L}\right)\left(\frac{n_i^2}{N}\right) $$ multiplied by recombination loss factors.
This makes sense to me since greater bandgap yields greater intrinsic carrier concentration, and greater intrinsic carrier concentration yields greater $ J_o $ and greater open circuit voltage.
However, I recently learned that a wide bandgap material, AlGaInP (Aluminium gallium indium phosphide), has a pretty high intrinsic carrier concentration due to its aluminum content.
How can I understand this situation where you have a wide bandgap AND high intrinsic carrier concentration??