For example, in a p-n junction scenario where the electron is displaced from LOCATION A, due to diffusion to a lower quantum state at LOCATION B in the p-type silicon, as seen in the following diagram :
does this mean that the electron that initially had a higher probability of being found at LOCATION A, now due to displacement due to diffusion has a higher probability of being found at the new location, location B ?
Is this the correct interpretation?
As the conventional quantum mechanical model of the near-free electron cloud, implies that the probability of finding the electron in a crystal is near uniform everywhere. So what does this mean to have the electron move from one location x to another , when the probability of finding a near free electron is already uniform.
Or that the probability initially peaks at LOCATION A, then after displacement the probability then peaks at LOCATION B