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In semiconductor physics, in context of PN junctions/pixel detectors, what is the difference/meaning of N-in-N and N-in-P technology ? How could we have a N-N diode ?

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    $\begingroup$ Could you provide a link to such a description? That might clarify what you are asking. $\endgroup$ – Jon Custer Jul 26 '19 at 14:48
  • $\begingroup$ thank you. You may consider for example : cds.cern.ch/record/2285585/files/ATLAS-TDR-030.pdf On page labelled 132 : "The n-in-p technology has been chosen because it is a single sideprocess, simplifying the product flow with respect to the n-in-n technology..." $\endgroup$ – Mathieu Krisztian Jul 26 '19 at 19:35
  • $\begingroup$ After (finally) looking at the document, I think they mean n-i-p for both. Now, normally, this is often put as pin or p-i-n . The "i" stands for intrinsic silicon. What that means is you get a much thicker region where you can collect charges. $\endgroup$ – Jon Custer Jul 29 '19 at 16:46
  • $\begingroup$ thank you for your kind explanation Jon. $\endgroup$ – Mathieu Krisztian Jul 30 '19 at 19:13

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