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In an n-type semiconductor, the thermal equilibrium electron concentration (n0=1015/cm3) and the intrinsic carrier concentration (ni=1010/cm3). The mean life time of minority carriers is 1us. The steady state excess hole concentration due to constant light illumination is 4*105/cm3. Under illumination, the steady state electron-hole concentration is-

My attempt:

At steady state since generation rate is equal to recombination rate, I found out recombination rate by dividing excess hole concentration by the given hole lifetime. I got 400 cm-3/ns but the answer provided by the instructor is 500 cm-3/ns.

An observation:

If I add thermal equilibrium hole value to excess hole concentration then I get the required answer of 500. But recombination rate is given by excess minority concentration. So why I need this addition?

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closed as off-topic by Jon Custer, John Rennie, Emilio Pisanty, tpg2114 Jul 29 at 1:40

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