I know that in a transistor, the base-emitter (B-E) junction has to be forward biased while collector-base (C-B) junction needs to be in reverse bias.
Question: What would happen if we alter this biasing?
Case 1: Both B-E and C-B junctions are reverse biased.
Guess: Nothing will happen as electrons are being pulled away from the base region leading to no flow of current.
Case 2: C-B junction is forward biased and B-E junction is reverse biased
Guess: Transistor can be operated in normal fashion. But I know that collector is purposefully designed to be larger for heat dissipation. In our case, as emitter (which is not as large as collector) serves the purpose of a collector. It will cause heating in our circuit which can damage the transistor.
Case 3: Both B-E and C-B junctions are forward biased.
Guess: For this one, I suppose one out of two things should happen (I am not sure what).
Possibility 1: As both junctions are forward biased, electrons accumulate at the thinly occupied thinly doped base region. This causes overheating thus damaging the transistor.
Possibility 2: As both junctions are forward biased, electrons accumulate at the thinly occupied thinly doped base region. This constitutes to rise in base current. Thus transistor conducts like two independent separate diodes.
Are these above guesses right or wrong? Detailed explanation would be helpful