Whether the reason is as follows? Predominantly HPGe is p type. So compensation of large p type impurity requires more n+ contact. (700um) But n type Ge is made by doping of excess addition of n type impurity in p type HPGe. So n type impurity addition always slightly excess of p type impurity. Hence, slight excess n type impurity in n type HPGe requires, p+ contact with very less thickness. (0.3um)
Read the references as suggested....but still not got answer Li is added by diffusion process but B is added by implantation. In Ion implantation we can achieve thin contact, but in diffusion we can get only Thick contact. Fine. It is liks DJD vs PIPS detector for alpha. Can you tell me why Li is also not added as contact by Ion implantation method?