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In p-n homojunction, meaning that the p-type and n-type semiconductor are same material, one can measure the built-in potential.

My question is in metal/semiconductor junction, can we measure the built-in potential in experiment?

If so, as the built-in potential is defined as the work function difference between metal and doped semiconductor (in the textbook description), do we find an agreement between the theory and experiment?

Thanks for your help.

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  • $\begingroup$ How does one measure the built-in potential of a p-n homojunction? $\endgroup$ – Stephen Blake Mar 5 '17 at 11:49

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