The Zener effect is distinct from avalanche breakdown. Avalanche breakdown involves minority carrier electrons in the transition region being accelerated, by the electric field, to energies sufficient for freeing electron-hole pairs via collisions with bound electrons. The Zener and the avalanche effect may occur simultaneously or independently of one another. In general, diode junction breakdowns occurring below 5 volts are caused by the Zener effect, whereas breakdowns occurring above 5 volts are caused by the avalanche effect. Breakdowns occurring at voltages close to 5V are usually caused by some combination of the two effects. Zener breakdown voltage is found to occur at electric field intensity of about 3×107 V/m. Zener breakdown occurs in heavily doped junctions (p-type semiconductor moderately doped and n-type heavily doped), which produces a narrow depletion region. The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion region. Temperature increase in the junction increases the contribution of the Zener effect to breakdown, and decreases the contribution of the avalanche effect.
My question is can in a diode, primarily under Zener breakdown, increasing the reverse-bias voltage cause avalanche breakdown ?