Suppose I want to solve the $1\text{D}$, time-independent Schrödinger-equation for a metal-semiconductor junction.
In the metal region $0 \leq x \leq x_{0} $ the Schrödinger equation reads:
$$\left(-\frac{\hbar^2}{2m} \frac{d^2}{dx^2}+V(x)\right)\psi = E\psi $$
In the semiconductor region $x_{0}<x\leq L$ the Schrödinger equation reads:
$$\left(-\frac{\hbar^2}{2m^{*}} \frac{d^2}{dx^2}+\Delta E_{SM} + V(x)\right) \psi = E\psi $$
Here $\Delta E_{SM}$ is the offset between the conduction band edges in the metal and semiconductor region. My question is: Is there a way to "integrate out" the metal region or replace it with an effective boundary condition at the semiconductor-metal interface?