The solid state drive (SSD) consists of numerous data storage elements. Each element (NAND flash memory element) reminds me of a microscopic battery. An electron is supposed to enter the element through the oxide layer and remain inside. A transistor beneath the element is used when reading the memory element. However, the oxide layer is prone to deterioration.
After I attended a series of lectures on this technology, I was struck with a question in mind. The electron moves through the oxide layer by means of quantum tunneling. Does that mean that the tunneling in principle is a process that deteriorates the barrier?