Suppose we have a p-type material and metal contacts deposited taking the work function of a metal and semiconductor into account. At room temperature (depending on the doping level) they might now show non-linear IV curve (non-ohmic behavior). How does annealing at higher temperature improves the ohmic contacts and eventually become ohmic? Is there a way to calculate at which temperature to expect the transition?

  • $\begingroup$ I believe that annealing allows for diffusion of the metal atoms into the semiconductor, but I'm rusty on that... $\endgroup$ – Floris Apr 17 '15 at 0:00
  • $\begingroup$ Useful link: ecee.colorado.edu/~bart/book/book/chapter3/ch3_5.htm describes the phenomenon in detail. $\endgroup$ – Floris Apr 17 '15 at 0:02
  • $\begingroup$ My educated guess, is that annealing typically makes the diffusion more uniform. More uniform implies more linear. More linear implies more ohmic. $\endgroup$ – Guill Apr 22 '15 at 6:23

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