Timeline for Carrier Recombination Lifetime in Thermal Equilibrium
Current License: CC BY-SA 4.0
6 events
| when toggle format | what | by | license | comment | |
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| Apr 6 at 19:43 | vote | accept | Abe | ||
| Apr 6 at 15:24 | comment | added | freecharly | @Abe Yes, in the intrinsic thermal equilibrium case, with intrinsic equal electron and hole concentrations, this should be the characteristic mean time ("lifetime") it would take an electron or a hole to recombine. The inverse of this time is the probability per unit time for an electron or hole to recombine. | |
| Apr 6 at 5:03 | comment | added | Abe | Let's say that an intrinsic material is in thermal equilibrium with generation rate (g) equals recombination rate (R) assuming only band-to-band recombination/generation. Wouldn't the lifetime for both holes and electrons be simply$\tau=\frac{n_{0}}{g}=\frac{p_0}{R}$ where p0 and n0 are the equilibrium carrier concentrations? | |
| Apr 5 at 17:30 | history | edited | freecharly | CC BY-SA 4.0 |
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| Apr 5 at 16:38 | history | edited | freecharly | CC BY-SA 4.0 |
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| Apr 5 at 16:12 | history | answered | freecharly | CC BY-SA 4.0 |