Timeline for Question about diffusion current in semiconductor?
Current License: CC BY-SA 4.0
6 events
| when toggle format | what | by | license | comment | |
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| Mar 28, 2023 at 22:11 | comment | added | Puk | Diffusion current is a result of the fact that there are more carriers randomly making their way from $x = \ell$ toward $x = 0$ than from $x = -\ell$ toward $x = 0$, just by virtue of there being more carriers at $x = \ell$ than at $x = -\ell$. It's not because the random motion of the carriers at $x = \ell$ is preferentially toward the left, or vice versa. | |
| Mar 28, 2023 at 20:55 | comment | added | Jon Custer | In a random walk, atoms in the lower concentration region go both left and right. The net movement is from high to low concentration, but that does not imply that no atoms move from low to high. | |
| Mar 28, 2023 at 20:52 | comment | added | Abdelrahman_200 | @Joncuster I understand this but how the lower in concentration will go to the higher ? | |
| Mar 28, 2023 at 20:49 | comment | added | Jon Custer | Diffusion going from high concentration to low concentration is the result of a large number of random walks throughout the material. If each step is random, half will be in one direction and half in the other (for a 1-D problem). | |
| Mar 28, 2023 at 20:32 | history | edited | Qmechanic♦ | CC BY-SA 4.0 |
deleted 7 characters in body; edited title
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| Mar 28, 2023 at 20:18 | history | asked | Abdelrahman_200 | CC BY-SA 4.0 |