According to the Review of Particle Physics (Section 33.7.4 of the 2014 edition) there are two main causes of radiation damage for electronic devices:

1. Bulk damage due to displacement of atoms from their lattice sites. This leads to increased leakage current, carrier trapping, and build-up of space charge that changes the required operating voltage. Displacement damage depends on the non-ionizing energy loss and the energy imparted to the recoil atoms, which can initiate a chain of subsequent displacements, i.e., damage clusters. Hence, it is critical to consider both particle type and energy.
2. Surface damage due to charge build-up in surface layers, which leads to increased surface leakage currents. In strip detectors the inter-strip isolation is affected. The effects of charge build-up are strongly dependent on the device structure and on fabrication details. Since the damage is proportional to the absorbed energy (when ionization dominates), the dose can be specified in rad (or Gray) independent of particle type.

The review is freely accessible and, although brief and technical, you can find more details there.

According to the Review of Particle Physics (Section 33.7.4 of the 2014 edition) there are two main causes of radiation damage for electronic devices:

1. Bulk damage due to displacement of atoms from their lattice sites. This leads to increased leakage current, carrier trapping, and build-up of space charge that changes the required operating voltage. Displacement damage depends on the non-ionizing energy loss and the energy imparted to the recoil atoms, which can initiate a chain of subsequent displacements, i.e., damage clusters. Hence, it is critical to consider both particle type and energy.
2. Surface damage due to charge build-up in surface layers, which leads to increased surface leakage currents. In strip detectors the inter-strip isolation is affected. The effects of charge build-up are strongly dependent on the device structure and on fabrication details. Since the damage is proportional to the absorbed energy (when ionization dominates), the dose can be specified in rad (or Gray) independent of particle type.

The review is freely accessible and, although brief and technical, you can find more details there. Also, the review suggests to look at the Handbook of Radiation Effects for a detailed explanation on the matter. From what I can see from the ToC, there is also a chapter named The interaction of radiation with shielding materials that might answer your curiosity about mechanical damage.

According to the Review of Particle Physics (Section 33.7.4 of the 2014 edition) there are two main causes of radiation damage for electronic devices:

1. Bulk damage due to displacement of atoms from their lattice sites. This leads to increased leakage current, carrier trapping, and build-up of space charge that changes the required operating voltage. Displacement damage depends on the non-ionizing energy loss and the energy imparted to the recoil atoms, which can initiate a chain of subsequent displacements, i.e., damage clusters. Hence, it is critical to consider both particle type and energy.
2. Surface damage due to charge build-up in surface layers, which leads to increased surface leakage currents. In strip detectors the inter-strip isolation is affected. The effects of charge build-up are strongly dependent on the device structure and on fabrication details. Since the damage is proportional to the absorbed energy (when ionization dominates), the dose can be specified in rad (or Gray) independent of particle type.

According to the Review of Particle Physics (Section 33.7.4 of the 2014 edition) there are two main causes of radiation damage for electronic devices:

1. Bulk damage due to displacement of atoms from their lattice sites. This leads to increased leakage current, carrier trapping, and build-up of space charge that changes the required operating voltage. Displacement damage depends on the non-ionizing energy loss and the energy imparted to the recoil atoms, which can initiate a chain of subsequent displacements, i.e., damage clusters. Hence, it is critical to consider both particle type and energy.
2. Surface damage due to charge build-up in surface layers, which leads to increased surface leakage currents. In strip detectors the inter-strip isolation is affected. The effects of charge build-up are strongly dependent on the device structure and on fabrication details. Since the damage is proportional to the absorbed energy (when ionization dominates), the dose can be specified in rad (or Gray) independent of particle type.

The review is freely accessible and, although brief and technical, you can find more details there.