Timeline for Why does a field-effect transistor (FET) with wrap-around gate work at all?
Current License: CC BY-SA 3.0
7 events
| when toggle format | what | by | license | comment | |
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| Jan 1, 2018 at 18:27 | vote | accept | Benedikt Bauer | ||
| Dec 30, 2017 at 19:30 | comment | added | freecharly | In this case the outer conductor is not a shield conductor on which charges are being induced on its outside. The outer conductor is held at a different potential than the inner conductor or semiconductor so that charges are induced on the inside of the outer conductor and the outside of the (semi)conductor. The situation is completely analogous to a parallel plate or coaxial capacitor | |
| Dec 30, 2017 at 19:22 | answer | added | freecharly | timeline score: 2 | |
| Nov 1, 2015 at 18:36 | history | edited | Qmechanic♦ | CC BY-SA 3.0 |
deleted 1 character in body; edited tags
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| Apr 1, 2015 at 14:38 | comment | added | Jon Custer | Which turns out not to be a naive statement at all. Metals may just have electrons to slosh around, but in semiconductors the dopants remain behind. | |
| Apr 1, 2015 at 13:59 | comment | added | Jiminion | My initial naive statement is to say a wrapping about a semiconductor is different than a wrapping around a conductor. | |
| Apr 1, 2015 at 13:45 | history | asked | Benedikt Bauer | CC BY-SA 3.0 |