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For good doping you need two things: (1) get enough dopant in to be useful in changing carrier concentrations, and (2) having an energy level close to a band edge to generate electrons (holes) in the band, rather than making a mid-level recombination center. The below is assuming you are trying to dope Silicon. Data is generally from Sze's excellent ...


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As radio amateurs we've all learned the various relationships of power, voltage, current and resistance as expressed in Ohm's Law Ohm's law is: $$ E = IR \tag{1} $$ This doesn't directly say anything about power. There is the related Joule's first law, which relates to electrical power converted to heat in resistive materials: $$ P = I^2 R \tag{2} $$ ...


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As Kevin Reid aptly explains, the circuit you have drawn is not realizable. But, let's take the closest physical thing you could build, assuming: your voltage source can supply enough energy that we don't hit its limits like all physical things, this apparatus has non-zero size Then, the circuit you actually built is this: simulate this circuit ...


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… an ideal power source capable of providing infinite current with no drop in the voltage it supplies. … Let's ignore the effects of current density on superconductors for now. … In these phrases is the explanation for the contradictory possibilities you have computed: you have supposed an impossible circuit. As a mathematical model, the behavior of ...


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You may be aware that both torque and angular momentum can be represented as a vector - and that such vectors follow the normal rules of vector addition. Thus, if you have equal rotation about both the X and the Y axis, what you really have is rotation about the XY axis; and in general, rotation about an arbitrary axis can be projected onto the X, Y and Z ...



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