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Dims is almost correct, in that you would only see resonant tunnelling effects at very low temperatures. In other words, at very low temperatures the electrons will sit at very well defined energy levels within the transistors. Under certain biases (voltages), the energy levels on either side of the thin barriers between devices will line up, and electrons ...


Are you speaking specifically about currents in wires? If you look at (the simplest version of) Ohm's law you will see that $\mathbf{J} = \sigma \mathbf{E}$, where $\sigma$ is the conductivity (technically it's a tensor, but we'll assume a constant scalar for now). In this case, $\eta$ = $\sigma^{-1}$, which is the resistivity. Thus, we can show that ...

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