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1answer
39 views

Hall Effect p-type Germanium holes density

I had to do some experiments with a Hall Effect Apparatus of Leybolds with a p-doped Germanium plate, this is the datasheet (pdf). eq. (1) $U_H=R_H \frac{IB}{d}$ $U_H$ = Hall voltage $R_H$ = Hall ...
4
votes
1answer
266 views

What the heck is negative effective mass?

I am reading this book:Solid State Electronic Devices by Ben G Streetman and Sanjay Kumar Banerjee. I have some doubts in the article 3.2.2 Effective mass. In this the aythors say that ...
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0answers
20 views

How does band narrowing (heavily doping the emitter) affect the alpha F and alpha R in the Ebers-Moll model of a BJT?

I think that when the emitter is heavily doped, the bandgap is reduced which increases the reference forward current(current flowing through the E-B junction ) but the alphas themselves do not change. ...
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0answers
41 views

What are some common errors when it comes to measuring hall voltage of a semiconductor?

What are some common errors when it comes to measuring hall voltage of a semiconductor? I've thought of two errors: Adjusting the potentiometer so that the width of the conductor would start with 0 ...
3
votes
1answer
272 views

Semiconductor problem: how much Boron is required to establish a certain amount of charge carrier density

The problem description is as follows: Boron is used to dope 1 kg of germanium (Ge). How much boron (B) is required to establish a charge carrier density of 3.091 x 10^17 / cm^3. One mole of ...
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vote
1answer
1k views

change of resistance in semiconductors due to temperature change

I have a question that popped up in an old exam I just can't find a way to solve. If you drop the temperature of this material from room temperature (I guess around 300K) to 0C (273K) the ...
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0answers
903 views

How to determine donor or acceptor impurity

I am working on a practice exam for semiconductor physics. Can anyone help me figure out how to determine whether we have donor or acceptor impurity in Gallium Arsenide? ...