What factors cause the velocity saturation to occur at different electric fields for different materials?
In semiconductors the velocity of carriers gets saturated after a certain value of electric field. In silicon it occurs at around $10^4 kV/cm$ and in GaAs at some other value. What factors are ...
I would like to compare my result in an order of magnitude. So, How can I estimate the strength of the electric field in a typical Si PN-junction?
Why electric field pointing to left? (The middle area is depletion region.) (This is without any external electrical voltage applied.)